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Preliminary Data Sheet PD60214 Rev B
IR20153S & (PbF)
HIGH SIDE DRIVER WITH RECHARGE
Features
? Floating channel designed for bootstrap operation
Fully operational up to 150V
Product Summary
V OFFSET
150V max.
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Tolerant to negative transient voltage, dV/dt immune
Gate drive supply range from 5V to 20V
Undervoltage lockout
Internal recharge FET for bootstrap refresh
Internal deadtime of 11 μ s and 0.8 μ s
CMOS Schmitt-triggered input logic
Output out of phase with input
Reset input
Split pull-up and pull-down gate drive pins
Also available LEAD-FREE (PbF)
I O +/-
V OUT
t on/off
400mA @ VBS=7V,
1.5A @ VBS=16V
5-20V
1.0 and 0.3 μ s
Description
The IR20153S is a high voltage, high speed power MOSFET driver . Proprietary HVIC
and latch immune CMOS technologies enable ruggedized monolithic construction. The
logic input is compatible with standard CMOS output down to 3.3V. The output driver
features a high pulse current buffer stage designed for minimum cross-conduction. The
floating channel can be used to drive an N-channel power MOSFET in the high or low
Package
8-Lead SOIC
side configuration which operates up to 150 volts.
Typical Connection
up to 150V
(Refer to Lead Assignments
for correct configuration).
This/These diagram(s) show
electrical connections only.
Please refer to our Applica-
tion Notes and DesignTips
for proper circuit board lay-
out.
www.irf.com
VCC
IN
RESET
VCC
IN
GND
RESET
VB
HOH
HOL
VS
Load
1
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